Publications

The nextnano software has been used in hundreds of scientific publications.

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PhD theses related to the nextnano++ software

Walter Schottky Institute, Technische Universität München, Germany


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PhD theses related to the nextnano3 software

Walter Schottky Institute, Technische Universität München, Germany


Schroedinger equation

Publications of our customers

Publications of our customers (selection)


Articles from members of the nextnano team

2010-2006 2009 2008 2007
  • Three-Dimensional Si/Ge Quantum Dot Crystals
    D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, V. Holý, G. Bauer
    Nano Letters 7 (10), 3150 (2007)
  • Theory of semiconductor quantum-wire based single- and two-qubit gates
    T. Zibold, P. Vogl, A. Bertoni
    Physical Review B 76, 195301 (2007) &
    Virtual Journal of Nanoscale Science & Technology 16 (20) (2007) &
    Virtual Journal of Quantum Information 7 (11) (2007)
  • nextnano: General Purpose 3-D Simulations
    S. Birner, T. Zibold, T. Andlauer, T. Kubis, M. Sabathil, A. Trellakis, P. Vogl
    IEEE Transactions on Electron Devices 54 (9), 2137 (2007)
  • Self-consistent quantum transport theory: Applications and assessment of approximate models
    T. Kubis, P. Vogl
    Journal of Computational Electronics 6, 183 (2007)
  • Electronic structure and transport for nanoscale device simulation
    A. Trellakis and P. Vogl
    in "Materials for Tomorrow. Theory, Experiments and Modelling" (Springer Series in Materials Science), ed. by S. Gemming, M. Schreiber, J.B. Suck, Springer, pp. 123-146 (2007)
2006
  • The 3D nanometer device project nextnano: Concepts, methods, results
    A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R.K. Smith, R. Morschl, P. Vogl
    Journal of Computational Electronics 5 (4), 285 (2006)
  • Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
    K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, S.N. Yi, Y.S. Park, C.M. Park, T.W. Kang
    Nanotechnology 17, 5754 (2006)
  • Modeling of semiconductor nanostructures with nextnano³
    S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl
    Acta Physica Polonica A 110 (2), 111 (2006)
  • Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs
    K.H. Lee, J.H. Na, R.A. Taylor, S.N Yi, S. Birner, Y.S. Park, C.M. Park, T.W. Kang
    Applied Physics Letters 89, 023103 (2006)
  • Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
    T. Nakaoka, E.C. Clark, H.J. Krenner, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J.J. Finley
    Physical Review B 74, 121305(R) (2006)
2005
  • Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
    H.J. Krenner, M. Sabathil, E.C. Clark, A. Kress, D. Schuh, M. Bichler, G. Abstreiter, J.J. Finley
    Physical Review Letters 94, 057402 (2005)
  • Recent advances in exciton based-quantum information processing in quantum dot nanostructures
    H.J. Krenner, S. Stufler, M. Sabathil, E.C. Clark, P. Ester, M. Bichler, G. Abstreiter, J.J. Finley, A. Zrenner
    New Journal of Physics 7, 184 (2005)
  • Aluminum arsenide cleaved-edge overgrown quantum wires
    J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
    Applied Physics Letters 87, 052101 (2005)
  • Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells
    M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, W. Stolz
    Physical Review B 72, 155324 (2005)
  • Modeling of Purely Strain-Induced CEO GaAs/In0.16Al0.84As Quantum Wires
    S. Birner, R. Schuster, M. Povolotskyi, P. Vogl
    Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)
  • Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
    O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
    Virtual Journal of Nanoscale Science Technology 12 (1) (2005) &
    Physical Review B 71, 245316 (2005)
  • Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers
    K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, J.W. Robinson, J.H. Rice, Y.S. Park, C.M. Park, T.W. Kang
    Proceedings of 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 547 (2005)
  • Contact block reduction method for ballistic transport and carrier densities of open nanostructures
    D. Mamaluy, D. Vasileska, M. Sabathil, T. Zibold, P. Vogl
    Physical Review B 71, 245321 (2005)
  • Calculation of carrier transport through quantum dot molecules
    T. Zibold, M. Sabathil, D. Mamluy, P. Vogl
    AIP Conf. Proc. 722, 799 (2005)
    Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff (2004)
  • Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement
    R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, S. Birner, P. Vogl, G. Abstreiter
    AIP Conf. Proc. 772, 898 (2005)
    Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff (2004)
  • Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy
    J. Ristic, C. Rivera, E. Calleja, S. Fernández-Garrido, M. Povoloskyi, A. Di Carlo
    Physical Review B 72, 085330 (2005)
  • Strain effects in freestanding three-dimensional nitride nanostructures
    M. Povolotskyi, M. Auf der Maur, A. Di Carlo
    physica status solidi (c) 2 (11), 3891 (2005)
  • Theoretical study of electrolyte gate AlGaN/GaN field effect transistors
    M. Bayer, C. Uhl, P. Vogl
    Journal of Applied Physics 97 (3), 033703 (2005)
2004
  • Quantum-confined Stark shifts of charged exciton complexes in quantum dots
    J.J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S.L. Liew, A.G. Cullis, M. Hopkinson
    Physical Review B 70, 201308(R) (2004)
  • Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
    J.J. Finley, M. Sabathil, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S. Liew, M. Migliorato, M. Hopkinson, P. Vogl
    Physica E 21, 199 (2004)
  • Advances in the theory of electronic structure of semiconductors
    J.A. Majewski, S. Birner, A. Trellakis, M. Sabathil, P. Vogl
    physica status solidi (c) 1 (8), 2003 (2004)
  • Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth
    R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, G. Schedelbeck, S. Sedlmaier, M. Stopa, S. Birner, P. Vogl, J. Bauer, D. Schuh, M. Bichler, G. Abstreiter
    physica status solidi (c) 1 (8), 2028 (2004)
  • Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces
    M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl, D. Alderighi, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, R. Nötzel
    Semiconductor Science and Technology 19, S351 (2004)
  • Electronic and optical properties of [N11] grown nanostructures
    M. Povolotskyi, A. Di Carlo, S. Birner
    physica status solidi (c) 1 (6), 1511 (2004)
  • Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces
    M. Povolotskyi, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
    IEEE Transactions on Nanotechnology 3 (1), 124 (2004)
  • Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires
    D. Alderighi, M. Zamfirescu, A. Vinattieri, M. Gurioli, S. Sanguinetti, M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, R. Nötzel
    Applied Physics Letters 84 (5), 786 (2004)
  • Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
    D. Bougeard, P.H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, K. Brunner
    Physica E 21, 312-316 (2004)
  • Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
    J.J. Finley, M. Sabathil, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S. Liew, M. Migliorato, M. Hopkinson, P. Vogl
    Physica E 21, 199-203 (2004)
2003
  • Microscopic description of nanostructures grown on (N11) surfaces
    M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
    Journal of Computational Electronics 2, 275 (2003)
  • Efficient computational method for ballistic currents and application to single quantum dots
    M. Sabathil, S. Birner, D. Mamaluy, P.Vogl
    Journal of Computational Electronics 2, 269 (2003)
  • Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate
    D. Alderighi, M. Zamfirescu, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, M. Povolotskyi, A. Di Carlo, P. Lugli, R. Nötzel
    physica status solidi (c) 0 (5), 1433 (2003)
  • Theory of vertical and lateral Stark shifts of excitons in InGaAs quantum dots
    M. Sabathil, S. Hackenbuchner, S. Birner, J.A. Majewski, P. Vogl, J.J. Finley
    physica status solidi (c) 0 (4), 1181 (2003)
  • Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures
    I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, W. Wegscheider
    Applied Physics Letters 83 (26), 5371 (2003)
2002
  • Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
    I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter, S. Schmult, W. Wegscheider
    Applied Physics Letters 80 (13), 2260 (2002)
  • Elektronische Struktur von Halbleiter-Nanobauelementen im thermodynamischen Nichtgleichgewicht (PhD Thesis)
    S. Hackenbuchner
    Selected Topics of Semiconductor Physics and Technology 48
    edited by G. Abstreiter, M.-C. Amann, M. Stutzmann, P. Vogl, Walter Schottky Institute, TU Munich (2002)
  • Towards fully quantum mechanical 3D device simulation
    M. Sabathil, S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl
    Journal of Computational Electronics 1, 81 (2002)
  • Nonequilibrium band structure of nano-devices
    S. Hackenbuchner, M. Sabathil, J.A. Majewski, G. Zandler, P. Vogl, E. Beham, A. Zrenner, P. Lugli
    Physica B 314, 145-149 (2002)
2001
  • Polarization induced 2D hole gas in GaN/AlGaN heterostructures
    S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl
    Journal of Crystal Growth 230, 607 (2001)

Articles that are based on nextnano simulations

2009-2016

There are too many to be listed here.

2008
  • InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices
    C. Buizert, F.H.L. Koppens, M. Pioro-Ladrière, H.-P. Tranitz, I.T. Vink, S. Tarucha, W. Wegscheider, L.M.K. Vandersypen
    Physical Review Letters 101, 226603 (2008)
  • Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes
    F. Rossi, G. Salviati, M. Pavesi, M. Manfredi, M. Meneghini, E. Zanoni, U. Zehnder
    Journal of Applied Physics 103, 093504 (2008)
  • Coexistence of direct and indirect band structures in arrays of InAs/AlAs quantum dots
    T.S. Shamirzaev, A.V. Nenashev, K.S. Zhuravlev
    Applied Physics Letters 92, 213101 (2008)
  • Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector
    L.G. Jiang, L.H. Kai, L. Cheng, C.S. Yan, Y.J. Zhong
    Semiconductor Science and Technology 23, 035011 (2008)
  • Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111)
    O. Moshe, D.H. Rich, B. Damilano, J. Massies
    Physical Review B 77, 155322 (2008)
  • Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
    Z.Y. Zhao, W.M. Zhang, C. Yi, A.D. Stiff-Roberts, B.J. Rodriguez, A.P. Baddorf
    Applied Physics Letters 92, 092101 (2008)
2007
  • Dimensionally constrained D’yakonov–Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D
    A.W. Holleitner, V. Sih, R.C. Myers, A.C. Gossard, D.D. Awschalom
    New Journal of Physics 9, 342 (2007)
  • Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells
    A. Gärtner, L. Prechtel, D. Schuh, A.W. Holleitner, J.P. Kotthaus
    Physical Review B 76, 085304 (2007)
  • Mobility enhancement in strained p-InGaSb quantum wells
    B.R. Bennett, M.G. Ancona, J. Brad Boos, B.V. Shanabrook
    Appl. Phys. Lett. 91, 042104 (2007)
  • Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
    G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, B. Damilano
    Phys. Rev. B 75, 075306 (2007)
  • Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures
    S. Leconte, F. Guillot, E. Sarigiannidou, E. Monroy
    Semiconductor Science and Technology 22, 107 (2007)
  • Investigating valley degeneracy in AlAs two dimensional systems and split-gate structures
    C. Knaak
    Diploma thesis, TU Munich (2007)
  • Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa
    X.-F. Fan, L.F. Register, B. Winstead, M.C. Foisy, W. Chen, X. Zheng, B. Ghosh, S.K. Banerjee
    IEEE Transactions on Electron Devices 54 (2), 291 (2007)
2006
  • Single-electron switching in AlxGa1–xAs/GaAs Hall devices
    J. Müller, Y. Li, S. von Molnár, Y. Ohno, H. Ohno
    Physical Review B 74, 125310 (2006)
  • Spin injection with three terminal device based on (Ga,Mn)As/n+-GaAs tunnel junction
    T. Kita, M. Kohda, Y. Ohno, F. Matsukura, H. Ohno
    physica status solidi (c) 3 (12), 4164 (2006)
  • Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 2 GPa
    X.-F. Fan, L.F. Register, B. Winstead, M.C. Foisy, W. Chen, X. Zheng, B. Ghosh, S.K. Banerjee
    Freescale Semiconductor, Technology Publications, EINTELL5458 (2006)
  • Vertical electron transport study in GaN/AlN/GaN heterostructures
    S. Leconte, E. Monroy, J.-M. Gérard
    Superlattices and Microstructures 40, 507 (2006)
  • Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy
    P. Hazdra, J. Voves, E. Hulicius, J. Pangrác, Z. Šourek
    Applied Surface Science 253 (1), 85 (2006)
  • Mid-infrared hole-intersubband electroluminescence in carbon-doped GaAs/AlGaAs quantum cascade structures
    O. Malis, L.N. Pfeiffer, K.W. West, A.M. Sergent, C. Gmachl
    Applied Physics Letters 88, 081117 (2006)
  • Coulomb corrections to the slowdown factor in quantum-dot quantum coherence
    S. Michael, W.W. Chow, H.C. Schneider
    Applied Physics Letters 89, 181114 (2006)
  • Thermally assisted tunneling processes in InxGa1–xAs/GaAs quantum-dot structures
    M. Gonschorek, H. Schmidt, J. Bauer, G. Benndorf, G. Wagner, G.E. Cirlin, M. Grundmann
    Physical Review B 74, 115312 (2006)
  • Single-electron switching in AlxGa1–xAs/GaAs Hall devices
    J. Müller, Y. Li, S. von Molnár, Y. Ohno, H. Ohno
    Physical Review B 74, 125310 (2006)
  • Two sub-band conductivity of Si quantum well
    M. Prunnila, J. Ahopelto
    Physica E 32, 281 (2006)
  • Analysis of the optical gain characteristics of semiconductor quantum-dash materials including the band structure modifications due to the wetting layer
    M. Gioannini
    IEEE Journal of Quantum Electronics 42 (3), 331 (2006)
  • Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser
    L. Guijiang, L. Hongkai, L. Cheng, C. Songyan, Y. Jinzhong
    Chinese Journal of Semiconductors 27 (5), 916 (2006)
  • A. Wójcik-Jedlinska, K. Gradkowski, K. Kosiel, M. Bugajski
    The role of photoluminescence excitation spectroscopy in investigation of quantum cascade lasers properties
    Electron Technology – Internet Journal 37/38 (10), 1 (2005/2006)
2005
  • Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
    M.A. Mastro, C.R. Eddy, Jr., N.D. Bassim, M.E. Twigg, A. Edwards, R.L. Henry, R.H. Holm
    Solid-State Electronics 49 (2), 251 (2005)
  • Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
    J. Novák, V. Holý, J. Stangl, T. Fromherz, Z. Zhong, G. Chen, G. Bauer, B. Struth
    Journal of Applied Physics 98, 073517 (2005)
  • Electric-field stabilization in a high-density surface superlattice
    T. Feil, H.-P. Tranitz, M. Reinwald, W. Wegscheider
    Applied Physics Letters 87, 212112 (2005)
  • Effect of well-width on the electro-optical properties of a quantum well
    A. Joshua, V. Venkataraman
    Semiconductor Science Technology 20, 490 (2005)
  • Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum Dot
    K.H. Lee, J.W. Robinson, J.H. Rice, J.H. Na, R.A. Taylor, R.A. Oliver, M.J. Kappers, C.J. Humphreys
    Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 5 (2005)
  • Hochortsaufgelöste optische Spektroskopie an niedrigdimensionalen Halbleiterstrukturen
    R. Schuster
    PhD thesis, University of Regensburg (2005)
2004
  • Materials growth for InAs high electron mobility transistors and circuits
    B.R. Bennett, B.P. Tinkham, J.B. Boos, M.D. Lange, R. Tsai
    J. Vac. Sci. Technol. B 22 (2), 688 (2004)
  • Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes
    M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, M. Eickhoff
    physica status solidi (c) 1 (8), 2210 (2004)
  • Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study
    K. Gopalakrishna Naik, K.S.R.K. Rao, T. Srinivasan, R. Muralidharan, S.K. Mehta
    Solid State Communications 132, 805 (2004)
2003
  • Engineering of Bulk and Nanostructured GaAs with Organic Monomolecular Films
    Klaus Adlkofer
    PhD Thesis, Technische Universität München (2003)
2002
  • Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures
    Gh. Dumitras, H. Riechert, H. Porteanu, F. Koch
    Physical Review B 66, 205324 (2002)

 

Please send an email to stefan.birner [at] nextnano.com if you published a paper based on nextnano simulations. We will then update this list.
Thank you very much!