Journal Papers

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  Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers

  A. M. Andrews, A. Benz, C. Deutsch, G. Fasching, K. Unterrainer, P. Klang, W. Schrenk, G. Strasser

  Materials Science and Engineering B 147, 152 (2008)

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  Theory of the electronic structure of GaN/AlN hexagonal quantum dots

  A. D. Andreev, E. P. O’Reilly

  Phys. Rev. B 62, 15851 (2000)

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  Electron and hole mobilities in silicon as a function of concentration and temperature

  N.D. Arora, J.R. Hauser, D.J. Roulston

  IEEE Trans. Electron Devices, ED-29, 292, (1982)

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  Eight-band kp model of strained zinc blende crystals

  Thomas B. Bahder

  Phys. Rev. B, 41, 11992 (1990)

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  Exciton binding energy in quantum wells

  G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki

  Physical Review B, 26, 1974 (1982)

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  A Macintosh Hypercard stack for calculation of thermodynamically-corrected buffer recipes

  R. J. Beynon

  Comput. Appl. Biosci. 4 (4), 487 (1988)

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  Buffer solutions: The basics

  R. J. Beynon, and J. S. Easterby

  Oxford University Press (1996)

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  Simulation of quantum cascade lasers - optimizing laser performance

  S. Birner, T. Kubis, and P. Vogl

  Photonik international 2, 60 (2008)

• [BirnerPhotonik2008]

  Simulation zur Optimierung von Quantenkaskadenlasern

  S. Birner, T. Kubis, and P. Vogl

  Photonik 1, 44 (2008)

• [BirnerAPhys2006]

  Modeling of Semiconductor Nanostructures with nextnano3

  S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl

  Acta Physica Polonica A 110 (2), 111 (2006)

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  Ballistic Quantum Transport using the Contact Block Reduction (CBR) Method - An introduction

  S. Birner, C. Schindler, P. Greck, M. Sabathil, and P. Vogl

  Journal of Computational Electronics 8, 267–286 (2009)

• [Biscani2020]

  A parallel global multiobjective framework for optimization: pagmo

  F. Biscani, D. Izzo

  Journal of Open Source Software, 5(53), 2338 (2020)

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  Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors

  V. A. Belyakov, V. A. Burdov

  J. Phys. Condens.: Matter 20, 025213 (2008)

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  Electron and hole spectra of silicon quantum dots

  V. A. Burdov

  JETP 94, 411 (2002)

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  Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature

  C. Canali, G. Majni, R. Minder, and G. Otaviani

  IEEE Transactions on Electron Devices, vol. ED-22, no. 11, pp. 1045-1047 (1975)

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  Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications

  F. Capasso, K. Mohammed, and A. Y. Cho

  IEEE Journal of Quantum Electronics QE-22, 1853 (1986)

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  Energy-band structure of Germanium and Silicon: The k.p method

  M. Cardona, F. H. Pollak

  Physical Review Vol. 142, No. 2, pp. 530-543 (1996)

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  Microscopic theory of nanostructured semiconductor devices: beyond the envelope=function approximation

  A. D. Carlo

  Semiconductor Science and Technology, 18(1), R1-31

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  Carrier mobilities in silicon empirically related to doping and field

  D. Caughey, R. Thomas

  Proc. IEEE 55, 2192 (1967)

• [Chatzikyriakou_PhysRevResearch_2022]

  Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental dataset approach

  E. Chatzikyriakou, J. Wang, L. Mazzella, A. Lacerda-Santos, M. C. da S. Figueira, A. Trellakis, S. Birner, T. Grange, C. Bäuerle, and X. Waintal

  Phys. Rev. Research 4, 043163, December (2022)

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  An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide

  J. Chilleri, Y. Wang, M. S. Shur, and S. K. O’Leary

  Solid State Communications 330, 114240, (2021)

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  k.p method for strained wurtizte semiconductors

  S. L. Chuang and C. S. Chang

  Physical Review B 54 (4), 2491, January (1996)

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  Optical gain of strained wurtzite GaN quantum-well lasers

  S. L. Chuang

  IEEE Journal of Quantum Electronics, vol. 32, no. 10, pp. 1791-1800, October (1996)

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  An Improved Electron and Hole Mobility Model for General Purpose Device Simulation

  M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, and H. H. Vuong

  IEEE Transactions on Electron Devices 44, 1529 (1997)

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  Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

  G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller

  Science 290, 2277 (2000)

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  Theoretical estimation of tunnel currents in hetero-junctions: The special case of nitride tunnel junctions

  J-Y. Duboz and B. Vinter

  J. Appl. Phys. 126, 174501 (2019)

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  Surface photovoltage studies of InGaAs and InGaAsN quantum well structures

  Gh. Dumitras and H. Riechert

  Physical Review B 66, 205324 (2002)

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  DESIGN CRITERIA FOR GaAs MESFETs RELATED TO STATIONARY HIGH FIELD DOMAINS

  L. F. Eastman, S. Tiwiari, and M. S. Shur

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  Semiconductor-based electron flying qubits: review on recent progress accelerated by numerical modelling

  Edlbauer, H., Wang, J., Crozes, T. et al.

  EPJ Quantum Technol. 9, 21 (2022)

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  Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials System: Binaries and Ternaries

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  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 3, MARCH 2001

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  Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling

  S. Fathololoumi, E. Dupont, C.W.I. Chan, Z.R. Wasilewski, S.R. Laframboise, D. Ban, A. Mátyás, C. Jirauschek, Q. Hu, and H. C. Liu

  Optics Express 20, 3866 (2012)

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  Optical Properties of Ellipsoidal CdSe Quantum Dots

  W.S. Ferreira, J.S. de Sousa, J.A.K. Freire, G.A. Farias, V.N. Freire

  Brazilian Journal of Physics 36, 438 (2006)

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  Tunnel-coupled one-dimensional electron systems with large subband separations

  S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, and G. Abstreiter

  Phys. Rev. B 74, 115324

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  Six-band k”p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

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  J. Appl. Phys. 94, 1079 (2003)

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  Theory of electron transport in small semiconductor devices using the Pauli master equation

  M. V. Fischetti

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  R. H. Fowler and L. Nordheim

  Royal Society 119 (781), 173-182 (1928)

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  Boundary conditions in multiband k.p models: A tight-binding test

  S. De Franceschi, J.-M. Jancu, F. Beltram

  Physical Review B 59 (15), 9691 (1999)

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  Quantum-cascade lasers without injector regions operating above room temperature

  A. Friedrich, G. Böhm, M.C. Amann, G. Scarpa

  Applied Physics Letters 86, 161114 (2005)

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  Gauge-invariant grid discretization of the Schrödinger equation

  M. Governale, C. Ungarelli

  Phys. Rev. B 58 (12), 7816 (1998)

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  Efficient Method for the Calculation of Dissipative Quantum Transport in Quantum Cascade Lasers

  P. Greck, S. Birner, B. Huber, and P. Vogl

  Optics Express 23, 6587–6600 (2015)

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  The nonequilibrium Green’s functions method and descendants: ways to avoid and to go

  P. Greck, C. Schindler, T. Kubis, and P. Vogl

  Abstracts of 14^th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 145 (2010)

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  Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

  C. H. Grein, P. M. Young

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  Bound to continuum superlattice miniband long wavelength GaAs/AlxGa1-xAs photoconductors

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  W. Hänch and M. Miura-Mattausch

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  Resonant-phonon-assisted THz quantum-cascade lasers with metal-metal waveguides

  Q. Hu, B.S. Williams, S. Kumar, H. Callebaut, S. Kohen, J.L. Reno

  Semiconductor Science and Technology 20, S228 (2005)

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  Dimensionally constrained D’yakonov-Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D

  A.W. Holleitner, V. Sih, R.C. Myers, A.C. Gossard, D.D. Awschalom

  New Journal of Physics 9, 342 (2007)

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  Empirical spds* tight-binding calculation for cubic semiconductors: General method and material parameters

  J.-M. Jancu, R. Scholz, F. Beltram, F. Bassani

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  Temperature dependence of photoluminescence from GaAs single and multiple quantumwell heterostructures grown by molecularbeam epitaxy

  D. S. Jiang, H. Jung, K. Ploog

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  Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

  Jogai2003

  J. Appl. Phys. 93, 1631 (2003)

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  Valence band parameters of wurtzite materials

  J.-B. Jeon, Yu.M. Sirenko, K.W. Kim, M.A. Littlejohn, M.A. Stroscio

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  A unified mobility model for device simulation - I. Model equations and concentration dependence

  D. B. M. Klaassen

  Solid-State Electronics 35, 953 (1992)

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  sp3s* Tight-binding parameters for transport simulations in compound semiconductors

  G. Klimeck, R. C. Bowen, T. B. Boykin, T. A. Cwik

  Superlattices and Microstructures, Vol. 27, No. 5, pp. 519-524

• [Kriekouki2022]

  Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations

  I. Kriekouki, F. Beaudoin, P. Philippopoulos, C. Zhou, J. Camirand-Lemyre, S. Rochette, S. Mir, M.J. Barragan, M- Pioro-Ladriere, P. Galy

  Solid-State Electronics 194 (1):108355.

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  Few-electron quantum dots

  L.P. Kouwenhoven, D.G. Austing, and S. Tarucha

  Rep. Prog. Phys. 64, 701 (2001)

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  Self-consistent quantum transport theory of carrier capture in heterostructures

  T. Kubis, A. Trellakis, and P. Vogl

  Proceedings of the 14^th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, Vol. 110, 369–372 (2005)

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  Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors

  M. Kumagai, S. L. Chuang, H. Ando

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  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

  Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller and J. S. Harris1

  Nature 437, 7063 (2005)

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  Miniband formation in a quantum dot crystal

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  Fowler‐Nordheim Tunneling into Thermally Grown SiO_2

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  Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

  L. Lever, Z. Ikonic, A. Valavanis, J. D. Cooper, and R. W. Kelsall

  Journal of Lightwave Technology 28, 3273 (2010)

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  A physically based mobility model for numerical simulation of nonplanar devices

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  Efficient method for the calculation of ballistic quantum transport

  D. Mamaluy, M. Sabathil, and P. Vogl

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  Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus- and Boron-Doped Silicon

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  Vertically coupled quantum wires in a longitudinal magnetic field

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  300 K operation of a GaAs-based quantum-cascade laser at lambda=9 µm

  H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori

  Appl. Phys. Lett. 78 (22), 3529 (2001)

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  Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors

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  Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects

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  Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization

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  Strain effects in freestanding three-dimensional nitride nanostructures

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  Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations

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  Tight-binding description of graphene

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  Physical Review B 66, 035412 (2002)

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  Strained Si, Ge, and Si(1-x)Ge(x) alloys modelled with a first-principles-optimized full-zone k.p method

  D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, A. Ghetti

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  Low-threshold terahertz quantum-cascade lasers

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  Applied Physics Letters 81 (8), 1381 (2002)

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  Towards fully quantum mechanical 3D device simulation

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  Optical Properties and Raman Spectroscopy of Carbon Nanotubes

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  Realistic tight-binding model for the electronic structure of II-VI semiconductors

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  Physical Review B 66, 205202 (2002)

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  Nearest-neighbor sp3d5s* tight-binding parameters based on the hybrid quasi-particle self-consistent GW method verified by modeling of type-II superlattices

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  Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress

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  Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells

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  Optical properties of GaN wurtzite quantum wires

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  High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

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  Nanomaterials 11, 1125 (2021)