mobility-model-arora
The Arora mobility model is used to simulate the doping dependent
mobility in Si and takes into account the scattering of the carriers by charged
impurity ions which leads to a degradation of the carrier mobility (ionized
impurity scattering). This model
is temperature dependent.
N.D.Arora, J.R.Hauser, D.J.Roulston
Electron and hole mobilities in silicon as a function of concentration and
temperature
IEEE Trans. Electron Devices, ED-29, 292, 1982
The total concentration of ionized impurities is given by ND+NA.
Note: In nextnano³ we use the nominal dopant
concentration as specified in the input file and not the ionized one.
| Parameter in
formula |
Description |
Input parameter |
| electrons |
holes |
|
electrons |
holes |
| µminn |
µminp |
reference mobility parameter |
n-mu-min |
p-mu-min |
| alphamn |
alphamp |
exponent |
n-alpha-mu-min |
p-alpha-mu-min |
| µdn |
µdp |
reference mobility parameter |
n-mu-d |
p-mu-d |
| alphadn |
alphadp |
exponent |
n-alpha-mu-d |
p-alpha-mu-d |
| N0n |
N0p |
reference impurity parameter |
n-n0 |
p-n0 |
| alphaNn |
alphaNp |
exponent |
n-alpha-n0 |
p-alpha-n0 |
| Aan |
Aap |
reference exponent parameter |
n-a-a |
p-a-a |
| alphaan |
alphaap |
exponent |
n-alpha-a-a |
p-alpha-a-a |
| ND |
NA |
concentration of ionized donors/acceptors |
|
|
| T |
T |
lattice temperature |
|
|
| T0 |
T0 |
temperature (300 K) |
|
|
!-------------------------------------------------------------!
$mobility-model-arora
optional !
!
material-name
character
required !
number-of-parameters
integer
required !
!
!++++++++++++++++++++++++++++++++++++
! for binaries, e.g. GaAs
!++++++++++++++++++++++++++++++++++++
n-mu-min
double
optional ! [cm2/Vs]
n-alpha-mu-min
double
optional ! []
n-mu-d
double
optional ! [cm2/Vs]
n-alpha-mu-d
double
optional ! []
n-n0
double
optional ! [cm-3]
n-alpha-n0
double
optional ! []
n-a-a
double
optional ! []
n-alpha-a-a
double
optional ! []
!
p-mu-min
double
optional ! [cm2/Vs]
p-alpha-mu-min
double
optional ! []
p-mu-d
double
optional ! [cm2/Vs]
p-alpha-mu-d
double
optional ! []
p-n0
double
optional ! [cm-3]
p-alpha-n0
double
optional ! []
p-a-a
double
optional ! []
p-alpha-a-a
double
optional ! []
!
!
!++++++++++++++++++++++++++++++++++++
! for ternaries, e.g. Al(x)Ga(1-x)As
!++++++++++++++++++++++++++++++++++++
n-bow-mu-min
double
optional ! [cm2/Vs] for alloys
n-bow-alpha-mu-min
double
optional ! []
n-bow-mu-d
double
optional ! [cm2/Vs]
n-bow-alpha-mu-d
double
optional ! []
n-bow-n0
double
optional ! [cm-3]
n-bow-alpha-n0
double
optional ! []
n-bow-a-a
double
optional ! []
n-bow-alpha-a-a
double
optional ! []
!
p-bow-mu-min
double
optional ! [cm2/Vs]
p-bow-alpha-mu-min
double
optional ! []
p-bow-mu-d
double
optional ! [cm2/Vs]
p-bow-alpha-mu-d
double
optional ! []
p-bow-n0
double
optional ! [cm-3]
p-bow-alpha-n0
double
optional ! []
p-bow-a-a
double
optional ! []
p-bow-alpha-a-a
double
optional ! []
!
$end_mobility-model-arora
optional !
!-------------------------------------------------------------!
Syntax
material-name = Si
Name of material to which this set of parameters
applies. Name has to be listed in
$default-materials.
number-of-parameters = 16
Control parameter if the number of parameters provided
is the same as demanded.
The parameters are specified as shown in the tables above. There are two
sets, one for electrons (n-) and one for holes (p-).
!++++++++++++++++++++++++++++++++++++
! for ternaries, e.g. Al(x)Ga(1-x)As
!++++++++++++++++++++++++++++++++++++
The specifiers containing "*-bow-*" are for alloys, i.e.
ternaries.
By default, linear interpolation is used if the bowing parameter is zero.
material-name
= Al(x)Ga(1-x)As
number-of-parameters = 4
n-bow-mu-min
= 0d0 ! [cm2/Vs]
Bowing parameters are zero if linear interpolation is used.
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