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Arora mobility model
More documentation on the
Arora mobility model ==>
nextnano3 documentation
binary_zb {
# or binary_wz {
name = Si # material name, e.g. Si,
GaAs, InP, ...
...
mobility_arora{
electrons{ mumin =
88 alm =
-0.57 # reference mobility parameter
[cm2/Vs] and exponent []
mud = 1252 ald
= -2.33 # reference mobility parameter
[cm2/Vs] and exponent []
n0 = 1.25e17 aln =
2.4 # reference
impurity parameter [cm-3] and
exponent []
a
= 0.88 ala =
-0.146 } # reference exponent parameter
[] and exponent []
holes{ mumin =
54.3 alm =
-0.57 # reference mobility parameter
[cm2/Vs] and exponent []
mud = 407
ald = -2.23 # reference mobility parameter
[cm2/Vs] and exponent []
n0 = 2.35e17 aln =
2.4 # reference
impurity parameter [cm-3] and
exponent []
a
= 0.88 ala =
-0.146 } # reference exponent parameter
[] and exponent []
}
}
The values of the parameters were taken from the DESSIS manual (2001).
The Arora mobility model is used to simulate the doping dependent
mobility in Si and takes into account the scattering of the carriers by charged
impurity ions which leads to a degradation of the carrier mobility (ionized
impurity scattering). This model
is temperature dependent.
N.D.Arora, J.R.Hauser, D.J.Roulston
Electron and hole mobilities in silicon as a function of concentration and
temperature
IEEE Trans. Electron Devices, ED-29, 292, 1982
=> (Here we have to insert the
equation for the mobility.)
The total concentration of ionized impurities is given by ND+NA
where ND and NA are the concentration of ionized donors or
acceptors, respectively.
Note: In nextnano++ we use the nominal dopant
concentration as specified in the input file and not the ionized one.
T0 = 300 K, T = temperature
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