Masetti mobility model
More documentation on the
Masetti mobility model ==>
nextnano3 documentation
binary_zb {
name = Si # material name, e.g. Si,
GaAs, InP, ...
...
mobility_masetti{
electrons{ mumax =
1417.0 # [cm2/Vs]
µmax = bulk phonon mobility
(same as mobility_constant{})
exponent = 2.5
# []
mobility_constant{})
mumin1 = 52.2
# [cm2/Vs]
mumin2 = 52.2
# [cm2/Vs]
mu1 = 43.4
# [cm2/Vs]
pc = 0
# [cm-3]
cr = 9.68e16
# [cm-3]
cs = 3.34e20
# [cm-3]
alpha = 0.680
# []
beta = 2.0
} # []
holes{ mumax
= 470.5 # [cm2/Vs]
µmax =
mobility_constant{})
exponent = 2.2
# []
mobility_constant{})
mumin1 = 44.9
# [cm2/Vs]
mumin2 = 0
# [cm2/Vs]
mu1 = 29.0
# [cm2/Vs]
pc = 9.23e16
# [cm-3]
cr = 2.23e17
# [cm-3]
cs = 6.10e20
# [cm-3]
alpha = 0.719
# []
beta = 2.0
} # []
}
}
The Masetti bulk mobility model is used to simulate the doping dependent
mobility in Si and takes into account the scattering of the carriers by charged
impurity ions which leads to a degradation of the carrier mobility (ionized
impurity scattering). This model
is temperature independent and the parameters are given for 300 K. Thus it is
only valid for 300 K.
G. Masetti, M. Severi and S. Solmi
Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-,
Phosphorus- and Boron-Doped Silicon
IEEE Trans. Electron Devices, Vol. ED-30 (7), 764 (1983)
=> (Here we have to insert the
equation for the mobility.)
The total concentration of ionized impurities is given by ND+NA
where ND and NA are the concentration of ionized donors or
acceptors, respectively.
Note: In nextnano++ we use the nominal dopant
concentration as specified in the input file and not the ionized one.
µconst is the result of mobility_constant{}.
The low-doping reference mobility µconstn,p is determined by the
constant mobility-model (i.e. the values in the database under keyword
mobility_constant{} are the same as under this keyword).
It is a model that combines lattice and impurity scattering.
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